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  • 管式LPCVD設備

    產品與服務 > 管式設備系列 > 管式LPCVD設備

    管式LPCVD設備

    TOPCon電池隧穿氧化層、i-poly、D-poly低壓化學氣相沉積。

    設備名稱 Equipment Name

    管式LPCVD設備  Horizontal LPCVD


    設備型號 Equipment Model

    LD-420/LD-420L/LD-420MAX


    設備用途 Equipment Application

    TOPCon電池隧穿氧化層、i-poly、D-poly低壓化學氣相沉積。

    Deposition of tunnel oxide layer, i-Poly and D-poly for TOPCon solar cells.

     

    技術特點  Features

    1、低壓與熱壁工藝特性,成膜均勻性、致密性好。

    Low pressure and hot wall process characteristics, with better film uniformity and good compactness.

    2、LPCVD工藝特性,基片密排對成膜速率影響小,單管裝片量大。
    LPCVD process, densely loaded substrates have little effect on the coating rate, with large loading capacity in single tube.

    3、更多溫區設置,可靠保證片間均勻性。
    More temperature zones to ensure the uniformity between wafers reliably.

    4、獨立調節分段進氣,彌補氣流耗盡效應。
    Independently adjustable segmented air inlet to compensate for the airflow depletion effect.

     

    設備參數  Parameters


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